High-low Junctions for Solar Cell Applications
نویسنده
چکیده
A new theoretical model to calculate the effective surface recombination velocity ($a) of a high-low junction with an arbitrary impurity distribution is presented. The model is applied to erfc-diffused pp+ junctions using experimental data of bandgap narrowing, lifetime and mobility. Bandgap narrowing is shown to degrade the minority carrier reflecting properties of the high-low junction. Computer results are applied for the design of BSF solar cells and to study other solar cell structures based on high-low junctions.
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